Silicon Carbide Schottky Diode 20A/1200V SIC SC20120PT With TO-247AB Package

• Encapsulation Structure: Plastic Sealed Transistor
• Application: Electronic Products
• Certification: RoHS, IATF16949
• Shipping Cost: Estimated freight per unit.: about shipping cost and estimated delivery time.
• Currency: US$
• Return&refunds: You can apply for a refund up to 30 days after receipt of the products.
• Model NO.: SC20120PT
• Material: Silicon
• Transport Package: Carton
• Specification: Carton
• Trademark: JF
• Origin: China
• HS Code: 854110000
• Production Capacity: 500000PCS/Month

Product Description

 

Product Description

SILICON CARBIDE SCHOTTKY DIODE
Electronics Component

Part Number:  SC20120PT

Major Parameter: 

Type	VRRM	IF	IR(25ºC)	IR(175ºC)	VF(25ºC)	VF(175ºC)	Tj	Outline
	V	A	μA	μA	V	V	ºC
SC20120PT	1200	2×10	5	50	1.8	2.5	175	TO-247AB
SC30120PT	1200	2×15	5	50	1.8	2.5	175
SC40120PT	1200	2×20	5	50	1.8	2.5	175

Brand: JF logo

Package:  TO-247AB
Manufacturer: Jinan Jingheng Electronics Co., Ltd.
Description:
SIC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material-Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over voltage conditions.

Features:

· Max Junction Temperature 175°C
· High Surge Current Capacity
· Positive Temperature Coefficient
· Ease of Paralleling
· No Reverse Recovery
· No Forward Recovery

Application: 
· General Purpose
· SMPS, Solar inverter, UPS
· Power Switching Circuits

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