SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter

Product Details
Customization: Available
Certification: RoHS, IATF16949
Shape: MODULE
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Number of Employees
524
Year of Establishment
1997-10-27
  • SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
  • SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
  • SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
  • SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
  • SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
  • SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
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Overview

Basic Info.

Model NO.
SC40N120S7PD
Shielding Type
Sharp Cutoff Shielding Tube
Cooling Method
Naturally Cooled Tube
Function
Switch Transistor
Working Frequency
High Frequency
Structure
Diffusion
Encapsulation Structure
Plastic Sealed Transistor
Power Level
Small Power
Material
Silicon Carbide
VDS
1200V
ID
65A
RDS(ON)
40 Milliohm
Transport Package
Carton
Specification
TO-247AB
Trademark
JF
Origin
China
HS Code
85411000
Production Capacity
1000000/Month

Product Description

 

SC40N120S7PD
1200V 65A N-Channel SIC Power MOSFET
Electronics Component

Part Number: SC40N120S7PD

Package: SOT-227 
SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter


Major Parameter: SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter

Brand: JF logo
Manufacturer: Jinan Jingheng Electronics Co., Ltd.

Features:

/ High blocking voltage with low on-resistance
/ High speed switching with low capacitance
/ High operating junction temperature capability
/ Very fast and robust intrinsic body diode
/ Kelvin gate input easing driver circuit design
/ Silicon Carbide (SIC) material
Applications:
/Motor drivers
/Solar inverters
/Automotive DC/DC converters
/Automotive compressor inverters
/Switch mode power supplies

SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter

Part Number Channel
VDSS(V)
(MAX)

ID(A)
(MAX)

PD(W)
(MAX)

VGS(V)
(MAX)
VTH(V)
Rds(on)(Ω)
@20V (Typ)

Rds(on)(Ω)
@20V (Max)

Rds(on)(Ω)
@4.5V(Typ)


ESD protection for G-S(Y/N)
Outline
SC60N65P N 650 29 150 -8/+22 1.8~4 0.06 0.079     TO-247
SC50N65P N 650 50   -10/+25 1.8~5 0.04 0.05    
SC45N65P N 650 55 208 -10/+25 1.8~4.5 0.045 0.066    
SC72N65P N 650 72   -10/+25 1.8~5 0.06 0.075    
SC20N65P N 650 92 312 -8/+22 1.9~4 0.02 0.03    
SC160N120P N 1200 19 134 -10/+25   0.16 0.195    
SC36N120P N 1200 36 192 -10/+25 2~4 0.08 0.098    
SC80N120P N 1200 41 208 -10/+25 1.8~5 0.08 0.1    
SC60N120P N 1200 60 330 -10/+25 1.9~4 0.04 0.055    
SC40N120P N 1200 65 417 -10/+23 1.8~4.5 0.04 0.052    
SC1000N170P N 1700 5 69 -10/+25 2.5~4.5 1 1.3    
SC45N170P N 1700 72 520 -10/+25 2~4 0.045 0.07    
Company Profile

SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter

SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A ParameterSC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter

SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
SC40N120S7PD SOT-227 Silicon Carbide MOSFET With 40 Milliohm 1200V/65A Parameter
 

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